Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-02
2011-08-02
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S088000, C257SE33053
Reexamination Certificate
active
07989814
ABSTRACT:
A thin film transistor array panel including a substrate; a display area signal line; a display area thin film transistor; a peripheral area signal line; a black matrix disposed on the display area signal line, the display area thin film transistor, and the peripheral area signal line, the black matrix including a first and a second contact holes exposing the peripheral area signal line; a protrusion member disposed on the peripheral area signal line, the protrusion member overlapping the peripheral area signal line; a transparent connector disposed on the black matrix and within the peripheral area, wherein the transparent connector contacts the peripheral area signal line through at least one of the first and the second contact holes and includes a protrusion within at least one of the first and the second contact holes which corresponds to the protrusion member; and a pixel electrode.
Cho Young-Je
Kang Su-Hyoung
Kang Sung-Wook
Kim Sung-hoon
Kong Hyang-Shik
Bryant Kiesha R
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Wright Tucker
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