Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-03-08
2011-03-08
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S529000, C257SE29117, C349S042000, C349S043000, C349S139000, C349S147000
Reexamination Certificate
active
07902553
ABSTRACT:
A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
REFERENCES:
patent: 6355943 (2002-03-01), Sung
patent: 6731364 (2004-05-01), Takahashi et al.
patent: 7247911 (2007-07-01), Tsai et al.
Choi Jae-Ho
Choi Yong-Mo
Jeong Chang-Oh
Kim Byoung-June
Kim Do-Hyun
F. Chau & Associates LLC
Nguyen Cuong Q
Samsung Electronics Co,. Ltd.
Tran Trang Q
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