Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-06-21
2011-06-21
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257S349000, C257S350000, C257SE21413, C257SE29278, C257SE27111, C438S151000, C438S154000, C438S163000
Reexamination Certificate
active
07964873
ABSTRACT:
A thin film transistor array panel is provided, which includes: a substrate; a first polysilicon member that is formed on the substrate and includes an intrinsic region, at least one first extrinsic region, and at least one second extrinsic region disposed between the intrinsic region and the at least one first extrinsic region and having an impurity concentration lower than the at least one first extrinsic region; a first insulator formed on the first polysilicon member and having an edge substantially coinciding with a boundary between the at least one first extrinsic region and the at least one second extrinsic region; and a first electrode formed on the first• insulator and having an edge substantially coinciding with a boundary between the intrinsic region and the at least one second extrinsic region.
REFERENCES:
patent: 5719065 (1998-02-01), Takemura et al.
patent: 5985701 (1999-11-01), Takei et al.
patent: 6072193 (2000-06-01), Ohnuma et al.
patent: 6087236 (2000-07-01), Chau et al.
patent: 6156613 (2000-12-01), Wu
patent: 6627471 (2003-09-01), Yang
patent: 6627489 (2003-09-01), Plais et al.
patent: 6746905 (2004-06-01), Fukuda
patent: 2005/0023533 (2005-02-01), Peng et al.
patent: 40114947 (1989-06-01), None
patent: 1019990076290 (1999-10-01), None
patent: 1020000031174 (2000-06-01), None
patent: 10-0343307 (2002-08-01), None
patent: 1020030033995 (2003-05-01), None
U.S. Patent No. 6,746,905 (it is related to Korean Application for which no English Language translation is within our possession), Jun. 8, 2004.
English Abstract for Publication No. 1020000031174, Jun. 5, 2000.
English Abstract for Publication No. 1019990076290, Oct. 15, 1999.
English Abstract for Publication No. 1020030033995, May 1, 2003.
F. Chau & Associates LLC
Lindsay, Jr. Walter L
Pompey Ron
Samsung Electronics Co,. Ltd.
LandOfFree
Thin film transistor array panel and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor array panel and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor array panel and manufacturing method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2719835