Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-01-04
2011-01-04
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S072000, C349S043000
Reexamination Certificate
active
07863607
ABSTRACT:
The disclosed thin film transistor array panel includes an insulating substrate, a channel layer including an oxide formed on the insulating substrate. A gate insulating is layer formed on the channel layer and a gate electrode is formed on the gate insulating layer. An interlayer insulating layer is formed on the gate electrode and a data line formed on the interlayer insulating layer and includes a source electrode, wherein the data line is made of a first conductive layer and a second conductive layer. A drain electrode formed on the interlayer insulating layer, and includes the first conductive layer and the second conductive layer. A pixel electrode extends from the first conductive layer of the drain electrode and a passivation layer formed on the data line and the drain electrode. A spacer formed on the passivation layer.
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Jeong Chang-Oh
Kim Do-Hyun
Lee Je-Hun
Innovation Counsel LLP
Jackson, Jr. Jerome
Samsung Electronics Co,. Ltd.
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