Thin film transistor array panel and manufacturing method...

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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C257S059000, C257S072000, C257SE29296, C257SE21459

Reexamination Certificate

active

08071977

ABSTRACT:
A thin film transistor and a manufacturing method thereof are provided. In the manufacturing method of the thin film transistor a semiconductive active layer and a semiconductor passivation layer are sequentially formed such that the semiconductor passivation layer protectively covers the semiconductive active layer. Then the stacked combination of the semiconductive active layer and semiconductor passivation layer are patterned by using a same patterning mask so that formed islands of the semiconductive active layer continue to be protectively covered by formed islands of the semiconductor passivation layer. In one embodiment, the semiconductive active layer is formed of a semiconductive oxide.

REFERENCES:
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patent: 2003-0055501 (2003-07-01), None
patent: 10-2004-0061541 (2004-07-01), None
patent: 10-2005-0056234 (2005-06-01), None
patent: 1996-0032746 (2006-09-01), None
patent: 10-2007-0102969 (2007-10-01), None

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