Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2006-12-18
2008-08-05
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S072000, C257S059000, C257SE21703, C257SE29117, C438S149000, C438S157000
Reexamination Certificate
active
07408200
ABSTRACT:
A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, and a drain electrode overlapping the edge of the gate electrode; and a pixel electrode connected to the drain electrode.
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Choi Kwon-Young
Jeon Jae-Hong
Jun Sahng-Ik
Lee Jeong-Young
Lawrence Don C.
MacPherson Kwok & Chen & Heid LLP
Pert Evan
Samsung Electronics Co,. Ltd.
Wilson Scott R.
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