Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-02-06
2007-02-06
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S034000, C438S149000, C438S151000, C438S158000
Reexamination Certificate
active
11082967
ABSTRACT:
A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.
REFERENCES:
patent: 2002/0021403 (2002-02-01), Kim et al.
patent: 2003/0133067 (2003-07-01), Park et al.
patent: 2004/0105067 (2004-06-01), Kim et al.
patent: 2005/0140888 (2005-06-01), Kwon
Cho Beom-Seok
Choe Hee-Hwan
Jeong Chang-Oh
Kim Sang-Gab
Lee Je-Hun
Au Bac H.
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Smith Zandra V.
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