Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-12-19
2006-12-19
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S088000, C257S091000, C257S093000, C257SE21703, C257SE27111, C257SE29117, C438S149000, C438S157000
Reexamination Certificate
active
07151279
ABSTRACT:
A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, and a drain electrode overlapping the edge of the gate electrode; and a pixel electrode connected to the drain electrode.
REFERENCES:
patent: 5777703 (1998-07-01), Nishikawa
patent: 2005/0112790 (2005-05-01), Lan et al.
Choi Kwon-Young
Jeon Jae-Hong
Jun Sahng-Ik
Lee Jeong-Young
Flynn Nathan J.
MacPherson Kwok & Chen & Heid LLP
Samsung Electronics Co,. Ltd.
Wilson Scott R.
LandOfFree
Thin film transistor array panel and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor array panel and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor array panel and manufacturing method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3688500