Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-03-22
2005-03-22
Smith, Matthew (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S071000, C257S072000, C257S296000, C257S300000, C257S350000, C257S088000, C438S709000, C438S710000, C349S043000, C349S139000
Reexamination Certificate
active
06870187
ABSTRACT:
A thin film transistor array panel is provided, which includes: a substrate; a gate electrode; a gate insulating layer formed on the gate electrode; a polysilicon layer formed on the gate insulating layer and including a pair of ohmic contact areas doped with conductive impurity; source and drain electrodes formed on the ohmic contact areas at least in part; a passivation layer formed on the source and the drain electrodes and having a contact hole exposing the drain electrode at least in part; and a pixel electrode formed on the passivation layer and connected to the drain electrode through the contact hole.
REFERENCES:
patent: 20020097349 (2002-07-01), Park
patent: 20030223019 (2003-12-01), Kim et al.
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Smith Matthew
Yevsikov Victor V
LandOfFree
Thin film transistor array panel and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor array panel and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor array panel and manufacturing method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3370518