Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-10-29
2010-06-15
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S025000, C257S040000, C257S049000, C257S059000, C257S066000
Reexamination Certificate
active
07737448
ABSTRACT:
A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode.
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Cho Seung-Hwan
Choi Tae-Young
Kim Bo-Sung
Noh Jung-Hun
Song Keun-Kyu
Innovation Counsel LLP
Lee Kyoung
Richards N Drew
Samsung Electronics Co,. Ltd.
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