Thin film transistor array panel and fabricating method thereof

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S149000, C438S257000

Reexamination Certificate

active

07049215

ABSTRACT:
A method of forming a thin film transistor array panel is described. The thin film transistor array comprises a substrate, a plurality of scan lines, a plurality of gates a plurality of first bonding pads and a plurality of second bonding pads, wherein the first bonding pads are connected with the scan lines. The first bonding pads and the second bonding pads are formed as a part of the first metal layer. The data lines are extended to electrically connected with the second bonding pads via contact windows.

REFERENCES:
patent: 2001/0019125 (2001-09-01), Hong et al.
patent: 2002/0130324 (2002-09-01), Song et al.
patent: 2003/0109126 (2003-06-01), Terasawa et al.
patent: 2004/0029308 (2004-02-01), Kong et al.

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