Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2009-03-11
2010-11-23
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S049000, C257S059000
Reexamination Certificate
active
07838886
ABSTRACT:
A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and fight transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
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Cho Sung-Haeng
Choi Yong-Mo
Kim Dong-Gyu
Kim Hyung-Jun
Kim Sung-Ryul
F. Chau & Associates LLC
Pham Long
Samsung Electronics Co,. Ltd.
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