Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-05-20
2008-05-20
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257S058000, C257S072000, C257S060000, C257S061000, C257SE21412, C257SE21413, C438S149000, C438S150000, C438S151000, C438S154000
Reexamination Certificate
active
10482256
ABSTRACT:
A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, drain electrodes and data lines is formed on the gate insulating layer and the semiconductor pattern. A protective layer is formed on the data wire. Pixel electrodes connected to the drain electrode via contact holes are formed on the protective layer. The gate wire and the data wire are made of Ag alloy containing Ag and an additive including at least one selected from Zn, In, Sn and Cr.
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PCT International Search Report; International application No. PCT/KR02/01252; International filing date: Jan. 8, 2002; Date of Mailing: Dec. 4, 2002.
Cho Beom-Seok
Jeong Chang-Oh
Kang Bong-Joo
Lee Jae-Gab
Armand Marc
Cantor & Colburn LLP
Le Thao X.
Samsung Electronics Co,. Ltd.
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