Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2008-10-23
2009-08-18
Luu, Chuong A (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257SE27131, C257SE27152, C257S071000
Reexamination Certificate
active
07576375
ABSTRACT:
A thin film transistor array includes a substrate, scan lines, data lines, thin film transistors, upper electrodes and pixel electrodes. The scan lines and the data lines are disposed on the substrate to define pixel areas on the substrate. The thin film transistors are disposed inside corresponding pixel areas and are driven through corresponding scan line and data lines. The upper electrodes are disposed within various pixel areas above the scan lines. The upper electrode has a protrusion protruding beyond the edge of a corresponding scan line. The pixel electrode is disposed within a corresponding pixel area and electrically connected to a corresponding thin film transistor and upper electrode, wherein each pixel electrode has at least a slit formed therein, the slit has an end portion near the corresponding scan line, and the end portion is completely shielded by the protrusion of the corresponding upper electrode.
REFERENCES:
patent: 6738107 (2004-05-01), Nagase et al.
patent: 6738109 (2004-05-01), Jeon
patent: 6777709 (2004-08-01), Wu et al.
patent: 7095469 (2006-08-01), Kim et al.
patent: 7180139 (2007-02-01), Lai
patent: 7473927 (2009-01-01), Lai
Arora Ajay K
Au Optronics Corporation
Jianq Chyun IP Office
Luu Chuong A
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