Thin film transistor and organic light emitting display...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C257SE31041, C257SE29117, C257SE29137, C257S043000

Reexamination Certificate

active

07915101

ABSTRACT:
Thin film transistors and organic light emitting displays using the same are provided. The thin film transistor may include a substrate, a semiconductor layer, a gate electrode, and source/drain electrodes on the substrate. The semiconductor layer is composed of a P-type semiconductor layer obtained by diffusing phosphorus into a zinc oxide semiconductor. The phosphorus is doped in the semiconductor layer to a concentration ranging from about 1×1014to about 1×1018cm−3.

REFERENCES:
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patent: 5506186 (1996-04-01), Van Gurp
patent: 2007/0108446 (2007-05-01), Akimoto
patent: 2002-94114 (2002-03-01), None
patent: 2004-273614 (2004-09-01), None
patent: 10-0635514 (2006-10-01), None
patent: 1020070035373 (2007-03-01), None
Patent Abstracts of Japan, Publication No. 2002-094114; Date of Publication: Mar. 29, 2002; in the name of Hiroya Iwata, et al.
Patent Abstracts of Japan, Publication No. 2004-273614; Date of Publication: Sep. 30, 2004; in the name of Tatsuya Fujita, et al.
Korean Patent Abstracts, Publication No. 100635514 B1; Date of Publication: Oct. 11, 2006; in the name of Dong Soo Choi, et al.

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