Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-03-25
2011-10-04
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S099000, C438S311000, C438S781000, C257SE21007, C257SE21051, C257SE21077, C257SE21128, C257SE21264, C257SE21266, C257SE21320, C257SE21324, C257SE21411
Reexamination Certificate
active
08030139
ABSTRACT:
A method of producing a thin film transistor includes a gate electrode formation step that forms a gate electrode on a substrate, a gate insulating layer formation step that forms a gate insulating layer on the substrate in such a manner as to cover the gate electrode formed in the gate electrode formation step, a source/drain electrodes formation step that forms a source electrode and a drain electrode on the gate insulating layer, and a semiconductor layer formation step that applies an aqueous solution for semiconductor layer formation which is an aqueous solution comprising at least a single wall carbon nanotube and a surfactant between the source electrode and the drain electrode formed in the source/drain electrodes formation step by a coating process to form a semiconductor layer comprising the single wall carbon nanotube.
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Tanaka, Satoshi et al., 10p-R-14 “Field-Effect Transistors Using Highly Dispersed Carbon Nanotubes/Polymer Composite Films Using an Ultracentrifuge”, p. 1174, Extended Abstracts (The 66th Autumn Meeting, 2005), The Japan Society of Applied Physics No. 3, Sep. 7, 2005.
Asano Takeshi
Shiraishi Masashi
Takenobu Taishi
Brother Kogyo Kabushiki Kaisha
Day Pitney LLP
Nhu David
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