Thin film transistor and method of manufacturing the same

Details Thin film transistor and method of manufacturing the same Thin film transistor and method of manufacturing the same

2011-01-04

2011-01-04

Dickey, Thomas L (Department: 2893)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C257S059000, C257SE29003, C257SE21143

Reexamination Certificate

active

07864257

ABSTRACT:
A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.

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patent: 2006/0202204 (2006-09-01), Choi et al.
patent: 2001-215530 (2001-08-01), None
patent: 2006-058676 (2006-03-01), None
patent: 1020050056217 (2005-06-01), None

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