Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-05-30
2006-05-30
Chaudhan, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S657000, C257S066000, C257S755000
Reexamination Certificate
active
07052944
ABSTRACT:
A thin-film transistor is provided which prevents the degradation of transistor characteristics due to ion channeling. A thin-film transistor (10) includes thin crystalline silicon (2) including source and drain regions (2a) and a channel region (2b), which are formed on a substrate (1); a gate insulator (3) formed on the crystalline silicon (2); and a gate electrode (4) formed on the gate insulator (3). The gate electrode (4) includes an amorphous layer (5) and a crystalline layer (6).
REFERENCES:
patent: 4339285 (1982-07-01), Pankove
patent: 4467519 (1984-08-01), Glang et al.
patent: 4579600 (1986-04-01), Shah et al.
patent: 5031010 (1991-07-01), Mikata et al.
patent: 5242530 (1993-09-01), Batey et al.
patent: 5254208 (1993-10-01), Zhang
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5581102 (1996-12-01), Kusumoto
patent: 5589233 (1996-12-01), Law et al.
patent: 5612236 (1997-03-01), Mikata et al.
patent: 5652156 (1997-07-01), Liao et al.
patent: 5670793 (1997-09-01), Miura et al.
patent: 5691228 (1997-11-01), Ping et al.
patent: 5767004 (1998-06-01), Balasubramanian et al.
patent: 5773309 (1998-06-01), Weiner
patent: 5869389 (1999-02-01), Ping et al.
patent: 5956603 (1999-09-01), Talwar et al.
patent: 6063654 (2000-05-01), Ohtani
patent: 6096626 (2000-08-01), Smith et al.
patent: 6150251 (2000-11-01), Yew et al.
patent: 6162716 (2000-12-01), Yu et al.
patent: 6392280 (2002-05-01), Besser et al.
patent: 6455400 (2002-09-01), Smith et al.
patent: 6468845 (2002-10-01), Nakajima et al.
patent: 6573193 (2003-06-01), Yu et al.
patent: 6689675 (2004-02-01), Parker et al.
patent: 6743680 (2004-06-01), Yu
patent: 6790791 (2004-09-01), Ahn et al.
patent: 60-109282 (1985-06-01), None
patent: 2-25072 (1990-01-01), None
patent: 2-130912 (1990-05-01), None
patent: 2-277244 (1990-11-01), None
patent: 3-33434 (1991-02-01), None
patent: 3-55850 (1991-03-01), None
patent: 6-163401 (1994-06-01), None
patent: 6-177372 (1994-06-01), None
patent: 6-267980 (1994-09-01), None
patent: 6-275805 (1994-09-01), None
patent: 8-248441 (1996-09-01), None
patent: 10-172919 (1998-06-01), None
patent: 2822394 (1998-09-01), None
patent: 11-307777 (1999-11-01), None
patent: 1998-016818 (1998-06-01), None
90113334, IEEE Transactions on Electron Devices, vol. 42, Aug. 1995, “Suppression of Boron Penetration in BF2-Implanted P-Type Gate MOSFET by Trapping of FLuorines in Amorphous Gate”.
Chaudhan Chandra
NEC Corporation
Young & Thompson
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