Thin film transistor and method of forming thin film transistor

Details Thin film transistor and method of forming thin film transistor Thin film transistor and method of forming thin film transistor

2006-02-07

2006-02-07

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C435S045000, C435S046000, C435S149000, C435S154000, C435S482000, C435S488000

Reexamination Certificate

active

06995045

ABSTRACT:
The thin film transistor has a non-transparent structure besides and insulated with the gate. Hence, the light transmitted from the substrate is blocked and the light current induced in the thin film transistor is negligible. The method uses a mask with a slit pattern to form a non-uniform photoresist. Hence, the mask could be used to pattern two conductor layers for forming source/drain/channel.

REFERENCES:
patent: 5622814 (1997-04-01), Miyata et al.
patent: 6486010 (2002-11-01), Hsu
patent: 6589825 (2003-07-01), Kim
Van Calster et al., “A simplified 3-step fabrication scheme for high mobility AMLCD panels,” Proceedings of the 14th International Display Research Conference, 1994, pp. 289-290.
K. Ono, “A Simplified 4 Photo-mask Process for 24cm Diagnol TFT-LCDs,” Asis Display '95, 1995, p. 693.
Chang W. Han et al., A TFT Manufactured by 4 Masks Process with New Photolithography, Asia Display '98, 1998, p. 1109.

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