Thin film transistor and method of forming the same

Details Thin film transistor and method of forming the same Thin film transistor and method of forming the same

2011-03-22

2011-03-22

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S043000, C257SE21159, C257SE21158, C257SE21133, C438S149000, C438S166000

Reexamination Certificate

active

07910920

ABSTRACT:
A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer.

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Chinese Office Action dated Jul. 2, 2010 in corresponding Chinese Application No. 200810074302.8, with English translation.

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