Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-02-08
2010-02-23
Garber, Charles D (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE29278
Reexamination Certificate
active
07667287
ABSTRACT:
Provided are a thin film transistor (TFT) capable of increasing ON current and decreasing OFF current values, a TFT substrate having the polysilicon TFT, a method of fabricating the polysilicon TFT, and a method of fabricating a TFT substrate having the polysilicon TFT. The polysilicon TFT substrate includes a gate line and a data line defining a pixel region, a pixel electrode formed in the pixel region, and a TFT including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a polysilicon active layer forming a channel between the source and drain electrodes. The polysilicon active layer includes a channel region on which the gate electrode is superposed, source and drain regions connected to the source and drain electrode, respectively, and at least two lightly doped drain (LDD) regions y formed between the source region and the channel region and between the drain region and the channel region. The LDD regions have an impurity concentration different from each other.
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patent: 6828950 (2004-12-01), Koyama
patent: 2002/0145141 (2002-10-01), Chen
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F. Chau & Associates LLC
Garber Charles D
Isaac Stanetta D
Samsung Electronics Co,. Ltd.
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