Thin film transistor and method of fabricating the same

Details Thin film transistor and method of fabricating the same Thin film transistor and method of fabricating the same

2008-05-20

2008-05-20

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S353000

Reexamination Certificate

active

07375396

ABSTRACT:
The present invention discloses a thin film transistor and a method of fabricating the same. The thin film transistor includes an insulating substrate; and a semiconductor layer, a gate insulating layer, a gate electrode, an interlayer insulator, and a source/drain electrode which are formed on the substrate, wherein the gate insulating layer is formed of a filtering oxide layer having a thickness of 1 to 20 Å.

REFERENCES:
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 2005/0037524 (2005-02-01), Matsumoto et al.
patent: 1223459 (1999-07-01), None
patent: 07-226374 (1995-08-01), None
patent: 08-064545 (1996-03-01), None
patent: 09-153457 (1997-06-01), None
patent: 1020020068252 (2002-08-01), None
patent: 1020040070979 (2004-08-01), None

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