Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-08-02
2011-08-02
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S166000, C257SE21412
Reexamination Certificate
active
07989326
ABSTRACT:
A thin film transistor and method of fabricating the same are provided. The thin film transistor includes: a metal catalyst layer formed on a substrate, and a first capping layer and a second capping layer pattern sequentially formed on the metal catalyst layer. The method includes: forming a first capping layer on a metal catalyst layer; forming and patterning a second capping layer on the first capping layer; forming an amorphous silicon layer on the patterned second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. The crystallization catalyst diffuses at a uniform low concentration to control a position of a seed formed of the catalyst such that a channel region in the polysilicon layer is close to a single crystal. Therefore, the characteristics of the thin film transistor device may be improved and uniformed.
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Lee Ki-Yong
Park Byoung-Keon
Seo Jin-Wook
Yang Tae-Hoon
H.C. Park & Associates PLC
Samsung Mobile Display Co., Ltd.
Such Matthew W
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