Thin film transistor and method of fabricating the same

Details Thin film transistor and method of fabricating the same Thin film transistor and method of fabricating the same

2006-01-11

2009-02-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S923000, C257S064000, C257SE29003

Reexamination Certificate

active

07485552

ABSTRACT:
A thin film transistor and method of fabricating the same are provided. The thin film transistor is characterized in that low angle grain boundaries formed in a channel layer in a semiconductor layer pattern is tilted −15 to 15° with respect to a current flowing direction. The method includes: forming an amorphous silicon layer on a substrate; forming a first capping layer on the amorphous silicon layer; forming a second capping layer on the first capping layer, and patterning the second capping layer such that seeds are formed in a line shape; forming a metal catalyst layer on the patterned second capping layer; diffusing the metal catalyst; and crystallizing and patterning the amorphous silicon layer to form a semiconductor layer pattern. Thus, a channel layer having an angle nearly parallel to the current flowing direction may be formed in a low angle grain boundary by forming and crystallizing the line-shaped seeds. In other words, the device characteristics may be improved and uniformed by adjusting a position and a direction of the crystal growth.

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