Thin film transistor and method of fabricating the same

Details Thin film transistor and method of fabricating the same Thin film transistor and method of fabricating the same

2006-04-14

2009-10-13

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C438S482000, C438S486000, C257SE21415

Reexamination Certificate

active

07601565

ABSTRACT:
A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region. The method includes forming a semiconductor layer pattern. Forming the semiconductor layer pattern includes: forming and patterning a first capping layer on an amorphous silicon layer; forming a second capping layer on the first capping layer pattern; forming a metal catalyst layer on the second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. Therefore, it is possible to prevent that a trap is generated in the junction region, thereby obtaining improved and uniform characteristics of the device.

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