Thin film transistor and method of fabricating the same

Details Thin film transistor and method of fabricating the same Thin film transistor and method of fabricating the same

2006-12-15

2008-11-18

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S486000

Reexamination Certificate

active

07452762

ABSTRACT:
The present invention discloses a thin film transistor and a method of fabricating the same. The thin film transistor includes an insulating substrate; and a semiconductor layer, a gate insulating layer, a gate electrode, an interlayer insulator, and a source/drain electrode which are formed on the substrate, wherein the gate insulating layer is formed of a filtering oxide layer having a thickness of 1 to 20 Å.

REFERENCES:
patent: 2006/0003503 (2006-01-01), Yang et al.
patent: 2006/0033106 (2006-02-01), Seo et al.
patent: 1223459 (1999-07-01), None
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patent: 09-153457 (1997-06-01), None
patent: 1020020068252 (2002-08-01), None
patent: 1020040070979 (2004-08-01), None

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