Thin film transistor and method of fabricating the same

Details Thin film transistor and method of fabricating the same Thin film transistor and method of fabricating the same

2006-04-25

2006-04-25

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S487000

Reexamination Certificate

active

07033872

ABSTRACT:
A thin film transistor which can be used in an LCD display panel includes an insulator substrate, a gate electrode located on the insulator substrate, an insulator film provided on the insulator substrate and the gate electrode, and a polycrystalline silicon film located on the insulator film. A channel is defined in a first portion of the polycrystalline silicon film over the gate electrode, and a drain and a source are defined in second and third portions of the polycrystalline silicon film over the insulator substrate. Grain sizes of the drain and source are equal to or greater than a grain size of the channel.

REFERENCES:
patent: 4975760 (1990-12-01), Dohjo et al.
patent: 5231297 (1993-07-01), Nakayama et al.
patent: RE34658 (1994-07-01), Yamazaki et al.
patent: 5466619 (1995-11-01), Choi
patent: 5498904 (1996-03-01), Harata et al.
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5548132 (1996-08-01), Batra et al.
patent: 5610737 (1997-03-01), Akiyama et al.
patent: 5733793 (1998-03-01), Song et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5773329 (1998-06-01), Kuo
patent: 5811327 (1998-09-01), Funai et al.
patent: 5834797 (1998-11-01), Yamanaka
patent: 5858820 (1999-01-01), Jung et al.
patent: 5946562 (1999-08-01), Kuo
patent: 6130120 (2000-10-01), Park
patent: 6403497 (2002-06-01), Oka et al.
patent: 36273660 (1987-04-01), None
patent: 4-139728 (1992-05-01), None
patent: 5067782 (1993-03-01), None
patent: 5082550 (1993-04-01), None
Serikawa et al., “Low-Temperature Fabrication of High-Mobility Poly-Si TFT's for Large-Area LCD's”IEEE Transactions on Electron Devices, 36(9) 1989.

Affiliated with

Also associated with

Rating

Thin film transistor and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3560124