Thin film transistor and method of fabricating the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438153, H01L 2100

Patent

active

061330744

ABSTRACT:
A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gate electrode with a substantially rectangular cross section, such that the gate electrode has a substantially constant thermal conductivity over its area. The TFT has a uniform device characteristic.

REFERENCES:
patent: 4654121 (1987-03-01), Miller et al.
patent: 5543635 (1996-08-01), Nguyen
patent: 5656824 (1997-08-01), Den Boer et al.
patent: 5728604 (1998-03-01), Rha et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film transistor and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and method of fabricating the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-467781

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.