Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-07-13
2000-10-17
Nelms, David
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438153, H01L 2100
Patent
active
061330744
ABSTRACT:
A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gate electrode with a substantially rectangular cross section, such that the gate electrode has a substantially constant thermal conductivity over its area. The TFT has a uniform device characteristic.
REFERENCES:
patent: 4654121 (1987-03-01), Miller et al.
patent: 5543635 (1996-08-01), Nguyen
patent: 5656824 (1997-08-01), Den Boer et al.
patent: 5728604 (1998-03-01), Rha et al.
Ishida Satoshi
Kuriyama Hiroyuki
Nakahara Yasuo
Shimogaichi Yasushi
Yamada Tsutomu
Le Dung A
Nelms David
Sanyo Electric Co,. Ltd.
Sony Corp.
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