Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-08-13
1999-03-09
Wliczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438300, H01L 21336
Patent
active
058799761
ABSTRACT:
A thin film transistor formed on an insulative substrate includes: a first semiconductor film including a channel region and first source/drain regions; a gate insulating film formed on the channel region of the first semiconductor film; a gate electrode formed on the gate insulating film; an insulating film formed on surfaces of the gate electrode; and a second semiconductor film formed on the first source/drain regions of the first semiconductor film. The second semiconductor film includes second source/drain regions which make contact with the first source/drain regions of the first semiconductor film, respectively, the second source/drain regions being separated above the gate electrode by a gap.
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Sharp Kabushiki Kaisha
Wliczewski Mary
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