Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-04-12
2011-04-12
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S368000, C257SE29320, C257SE27130, C257SE27132, C257SE23002, C349S042000, C349S043000
Reexamination Certificate
active
07923732
ABSTRACT:
Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
REFERENCES:
patent: 2007/0138471 (2007-06-01), Lim et al.
patent: 6-069233 (1994-03-01), None
patent: 7-273347 (1995-10-01), None
patent: 11-337976 (1999-12-01), None
Chin Hong-Kee
Choi Seung-Ha
Choi Shin-Il
Jeong Ki-Hun
Jeong Yu-Gwang
Innovation Counsel LLP
Lopez Fei Fei Yeung
Samsung Electronics Co,. Ltd.
Tran Minh-Loan T
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