Thin film transistor and method for making same

Details Thin film transistor and method for making same Thin film transistor and method for making same

1996-12-27

1998-11-24

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438589, H01L 2184

Patent

active

058406018

ABSTRACT:
A thin film transistor and method include a substrate and a first insulating layer having a trench portion. A first gate is formed on the first insulating layer and a second insulating layer is formed on the first gate. An active layer is formed on the second gate insulating layer and a third insulating layer is formed on the active layer. The second and third insulating layers include a contact hole. A second gate is formed on the third insulating layer and is connected to the first gate through the contact hole.

REFERENCES:
patent: 5317432 (1994-05-01), Ino
patent: 5348899 (1994-09-01), Dennison et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5574294 (1996-11-01), Shepard
patent: 5670398 (1997-09-01), Yin et al.
C.T. Liu, et al., "High Reliability and High Performance 0.35.mu.m Gate-Inverted TFT's for 16 Mbit SRAM Applications Using Self-Alighed LDD Structures," IEDM, 1992, pp. 32.7.1 through 32.7.4.

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