Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-11-26
1998-07-14
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 60, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
057809119
ABSTRACT:
A thin film transistor that can have a greater on/off current ratio is disclosed. The thin film transistor includes a substrate, a first gate electrode section formed on a predetermined region of the substrate, a second gate electrode section formed on a predetermined portion of the first gate electrode section, a third gate electrode section formed on the second gate electrode section parallel to, and spaced from the first gate electrode section. A gate electrode is formed by the first, second and third gate electrode sections. A gate insulating film is formed on exposed surfaces of the first, second and third gate electrode sections and a semiconductor layer is formed on the gate insulating film and the substrate. A first impurity region is formed in the semiconductor layer on one side of the first gate electrode section and a second impurity region is formed in the semiconductor layer on the second and third gate electrode sections on the other side of the first gate electrode section.
REFERENCES:
patent: 5563077 (1996-10-01), Ha
patent: 5578838 (1996-11-01), Cho et al.
Cho Seok Won
Gil Gyoung Seon
Park Joon Young
LG Semicon Co. Ltd.
Meier Stephen
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