Thin film transistor and method for fabricating the same

Details Thin film transistor and method for fabricating the same Thin film transistor and method for fabricating the same

1998-05-26

1999-06-22

Trihn, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438159, H01L 21336

Patent

active

059151730

ABSTRACT:
Disclosed is a thin film transistor formed on a substrate, comprising a patterned gate electrode formed on said substrate; a channel layer formed around said gate electrode with a gate insulating layer interposed therebetween; a interlayer insulating layer formed on said channel layer; and source and drain electrodes formed on both side walls of said channel layer and on both side portions of said interlayer insulating layer, and isolated from each other. Each of the channel and source/drain layers is composed of polysilicon with impurity ions. In the thin film transistor, because each of the source and drain electrodes is formed relatively thicker than the channel layer, them can be significantly reduced in resistance.

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