Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-04-09
2000-08-08
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438287, 438517, 438586, H01L 21336, H01L 2184
Patent
active
061001198
ABSTRACT:
A thin film transistor includes an insulating substrate; a polysilicon pattern formed on the insulating substrate; a first nitride layer disposed on a channel portion of the polysilicon pattern; heavily doped semiconductor layer regions disposed in upper portions of the polysilicon pattern on sides of the first nitride layer pattern; an interlevel insulating layer disposed on the insulating substrate, the polysilicon pattern, the first nitride layer and the heavily doped semiconductor layer regions, the interlevel insulating layer having a contact hole to expose a portion of the heavily doped semiconductor layer; source and drain electrodes connected to the heavily doped semiconductor layer regions through the contact hole; and a gate electrode formed on the interlevel insulating layer disposed on the first nitride layer.
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Chung You-Chan
Jang Jin
Lee Kyung-Ha
LG Electronics Inc.
Park James
Wilczewski Mary
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