Thin film transistor and method for fabricating the same

Details Thin film transistor and method for fabricating the same Thin film transistor and method for fabricating the same

1998-01-30

1999-08-10

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257351, 257352, 257402, 257651, 438149, 438162, 438166, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059362910

ABSTRACT:
The thin film transistor of this invention is formed on a substrate and includes an active layer and a first insulating film and a second insulating film sandwiching the active layer, wherein the overall polarity of fixed charges contained in the first insulating film is the reverse of the overall polarity of fixed charges contained in the second insulating film.

REFERENCES:
patent: 3945031 (1976-03-01), Kahng et al.
patent: 5172204 (1992-12-01), Hartstein
patent: 5767548 (1998-06-01), Wondrak et al.

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