Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-01
2000-08-22
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257332, 257347, 257401, 438149, 438230, 438270, H01L 2972
Patent
active
061076627
ABSTRACT:
A thin film transistor (TFT) and a method for fabricating the same utilize a sidewall spacer and a trench to improve the reliability of the device. The TFT includes a substrate, a trench formed in the substrate, and an active layer formed on the substrate and in the trench. A sidewall spacer is formed on the active layer along at least one side of the trench. A gate insulating film is formed over the sidewall spacer and the active layer. A gate electrode is formed on the gate insulating film in the trench. Source and drain electrodes are formed in the active layer or opposite sides of the gate electrode.
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Hayden, J.D., Cooper, K.J., Roth, S.S., Kirsch, H.C., "A New Technical Toridal TFT Structure for Future Generation SRAMs," International Electron Devices Meeting Technical Digest, Dec., 1993.
LG Semicon Co. Ltd.
Wojciechowicz Edward
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