Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2004-11-07
2009-06-02
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
Reexamination Certificate
active
07541229
ABSTRACT:
A method for forming a thin film transistor on a substrate is disclosed. A gate electrode and a gate insulation layer are disposed on a surface of the substrate. A deposition process is performed by utilizing hydrogen diluted silane to form a silicon-contained thin film on the gate insulation layer first. A hydrogen plasma etching process is thereafter performed. The deposition process and the etching process are repeated for at least one time to form an interface layer. Finally, an amorphous silicon layer, n+doped Si layers, a source electrode, and a drain electrode are formed on the interface layer.
REFERENCES:
patent: 5053354 (1991-10-01), Tanaka et al.
patent: 5184200 (1993-02-01), Yamanobe
patent: 5273919 (1993-12-01), Sano et al.
patent: 5340758 (1994-08-01), Wei et al.
patent: 5614728 (1997-03-01), Akiyama
patent: 5834345 (1998-11-01), Shimizu
patent: 6078059 (2000-06-01), Nakata
patent: 6285041 (2001-09-01), Noguchi
patent: 6395586 (2002-05-01), Huang et al.
patent: 2002/0127887 (2002-09-01), Uehara et al.
patent: 2003/0207507 (2003-11-01), Gosain et al.
patent: 2004/0084678 (2004-05-01), Peng et al.
patent: 2005/0053720 (2005-03-01), Yamazaki et al.
patent: H03-195062 (1991-08-01), None
patent: H09-092841 (1997-04-01), None
patent: 2004-146691 (2004-05-01), None
Wolf et al., Silicon Processing for the VLSI Era vol. 1: Process Technology, pp. 539-550, © 1990.
Gan Feng-Yuan
Lin Han-Tu
AU Optronics Corp.
Barnes Seth
Hsu Winston
Wilczewski M.
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