Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-24
2007-07-24
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S762000, C257SE21561, C438S158000, C438S592000
Reexamination Certificate
active
11218632
ABSTRACT:
A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSixlayer, a gate insulting layer, a semiconductor layer, a second CuSixlayer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSixlayer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSixlayer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSixlayer. Accordingly, the reliable TFT is provided through providing at last one CuSixlayer for enhancing the adhesion of copper and silicon and avoiding the diffusion, and the yield is improved as well.
REFERENCES:
patent: 6410376 (2002-06-01), Ng et al.
patent: 6686661 (2004-02-01), Lee et al.
patent: 7169653 (2007-01-01), Lee et al.
Lee Yeong-Shyang
Lin Han-Tu
Tsai Wen-Ching
Tu Kuo-Yuan
Au Optronics Corporation
Booth Richard A.
Rosenberg , Klein & Lee
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