Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-06-10
2008-06-10
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21561
Reexamination Certificate
active
07384831
ABSTRACT:
A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSixlayer, a gate-insulting layer, a semiconductor layer, a second CuSixlayer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSixlayer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSixlayer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSixlayer. Accordingly, the reliable TFT is provided through providing at last one CuSixlayer for enhancing the adhesion of copper and silicon and avoiding the diffusion, and the yield is improved as well.
REFERENCES:
patent: 6410376 (2002-06-01), Ng et al.
patent: 6686661 (2004-02-01), Lee et al.
patent: 7169653 (2007-01-01), Lee et al.
Lee Yeong-Shyang
Lin Han-Tu
Tsai Wen-Ching
Tu Kuo-Yuan
Au Optronics Corporation
Booth Richard A.
Rosenberg , Klein & Lee
LandOfFree
Thin film transistor and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2807773