Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-16
2000-01-25
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 60, 257 66, H01L 2701, H01L 2712
Patent
active
060181818
ABSTRACT:
A thin film transistor has a gate electrode formed of polysilicon on a surface of an insulating substrate or an insulating layer. The surface of the gate electrode is covered with a dielectric layer. A polysilicon layer is formed on a surface of the dielectric layer and source/drain regions are formed in this polysilicon layer. The dielectric layer covers the surface of the gate electrode and has its surface made flat. The source/drain regions are formed in the polysilicon layer on the surface of this flat dielectric layer. In another embodiment, a dielectric layer has a 2-layered structure with sidewall insulating layers located on sidewalls of a gate electrode and another insulating layer covering a surface of the gate electrode and surfaces of the sidewall insulating layers. By having larger film thickness of the dielectric layer in the vicinity of a side portion of the gate electrode than that above the gate electrode, the electric field concentration is modified in the vicinity thereof.
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Meier Stephen D.
Mitsubishi Denki & Kabushiki Kaisha
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