Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2004-03-18
2008-01-01
Menz, Douglas M. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000
Reexamination Certificate
active
07314784
ABSTRACT:
A channel-length of a TFT can be controlled with higher reproducibility, and a short channel-length of the TFT can be manufactured. Further, a structure of the TFT having an improved current-voltage characteristic is provided. A thin film transistor has a lamination layer where a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film is formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covers the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, a region which is in contact with the first insulating film and the third conductive film is a channel forming region in the semiconductor film, and the third conductive film is a gate electrode.
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Hirakata Yoshiharu
Nemoto Yukie
Menz Douglas M.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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