Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-02-18
1999-06-08
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, 257393, 257 66, H01L 2184
Patent
active
059100150
ABSTRACT:
The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
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Gosain Dharam Pal
Hara Masaki
Sameshima Toshiyuki
Sano Naoki
Usui Setsuo
Bowers Charles
Sony Corporation
Sulsky Martin
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