Thin film transistor and manufacturing method of the thin film t

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

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438166, 257393, 257 66, H01L 2184

Patent

active

059100150

ABSTRACT:
The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

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