Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-08-15
1999-09-14
Brown, Peter Toby
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438257, 438535, 438151, H01L 2100
Patent
active
059535989
ABSTRACT:
A fabrication sequence of a thin film transistor, in which a photoresist film is used as an ion doping mask to shield a portion of an amorphous semiconductor layer larger than a gate electrode formed above in width (gate length). The mask is designed by pre-calculating the accuracy of the alignment and etching, so that the gate electrode overlaps neither the source region nor drain region. Thus, it has become possible to form the gate electrode in such a manner not to overlap the source region or drain region while securing an impurity-free offset region. As a result, the present thin film transistor can reduce the OFF-state current and renders excellent OFF-state characteristics, and therefore, when employed in a liquid crystal display device, the resulting liquid crystal display device can prevent display defects, such as a flicker.
REFERENCES:
patent: 5439837 (1995-08-01), Hata et al.
patent: 5482871 (1996-01-01), Pollack
patent: 5648277 (1997-07-01), Zhang et al.
H. Ohshima et al., "Full-Color LCDs with Completely Integrated Drivers Utilizing Low-Temperature Poly-Si TFTs", SID 93 Digest (1993), pp. 387-390 .
Adachi Masahiro
Hata Akihiro
Brown Peter Toby
Conlin David G.
Duong Khanh
Neuner George W.
Sharp Kabushiki Kaisha
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