Thin-film transistor and fabrication method thereof

Details Thin-film transistor and fabrication method thereof Thin-film transistor and fabrication method thereof

2006-09-11

2008-08-19

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S159000, C257S057000, C257S061000, C257SE21414, C257SE29291

Reexamination Certificate

active

07413940

ABSTRACT:
A fabrication method of a TFT includes successively forming four thin films containing a first conductive layer, an insulation layer, a semiconductor layer, and a second conductive layer on a substrate, performing a first PEP process to pattern the four thin films for forming a semiconductor island and a gate electrode with the semiconductor layer and the first conductive layer respectively. Then, a laser ablation process is performed to define a channel pattern in the four thin films and remove a portion of the second conductive layer so that unconnected source electrode and drain electrode are formed with the second conductive layer.

REFERENCES:
patent: 4684435 (1987-08-01), Kaisha
patent: 5598012 (1997-01-01), Hebiguchi
patent: 5828082 (1998-10-01), Wu
patent: 6303946 (2001-10-01), Sung
patent: 6399258 (2002-06-01), O'Brien
patent: 6894747 (2005-05-01), Okumura
patent: 7145174 (2006-12-01), Chiang et al.
patent: 7294881 (2007-11-01), Korenari et al.
patent: 2002/0125481 (2002-09-01), Kimura
patent: 2005/0285107 (2005-12-01), Koo et al.
patent: 2006/0097260 (2006-05-01), Huang
patent: 1202742 (1998-12-01), None
patent: 1348553 (2002-05-01), None
patent: 1403861 (2003-03-01), None
patent: 1-259565 (1989-10-01), None
patent: 2-230125 (1990-09-01), None

Affiliated with

Also associated with

Rating

Thin-film transistor and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin-film transistor and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film transistor and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4002985