Thin film transistor and fabrication method thereof

Details Thin film transistor and fabrication method thereof Thin film transistor and fabrication method thereof

2006-12-05

2006-12-05

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257SE29151

Reexamination Certificate

active

07145209

ABSTRACT:
A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

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