Thin-film transistor and display device using the same

Details Thin-film transistor and display device using the same Thin-film transistor and display device using the same

1996-07-03

1998-09-22

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 52, 257 57, 257294, 257347, 257384, 257388, 257401, 257412, 257659, 257 59, H01C 31062

Patent

active

058118462

ABSTRACT:
In a thin-film transistor 171, in order to sufficiently suppress an optical leakage current Ioff, thereby achieving a high ON/OFF current ratio, at least one of shortest distances between an arbitrary intersection of an outline of a gate electrode 131 and an outline of a drain electrode 141 and an intersection of the outline of the gate electrode 131 and an outline of a source electrode 151 is formed to be larger than the shortest distance between a portion of the outline of the gate electrode 131 overlapping the drain electrode 141 and another portion thereof overlapping the source electrode 151.

REFERENCES:
Patent Abstracts of Japan, vol. 16, No. 316 (E-1231) Jul. 10, 1992 & JP-A-04 088 641 (Toshiba Corp), Mar. 23, 1992.
Patent Abstracts of Japan, vol. 13, No. 268 (E-775) Jun. 20, 1989 & JP-A-01 059 863 (Matsushita Electric Ind Co Ltd) Mar. 7, 1989.
Akiyama et al. "An a-Si TFT With a New Light-Shield Structure And Its Application to Active-Matrix Liquid Crystal Displays", International Electron Devices Meeting 1988, San Francisco, CA, Dec. 11-14, 1988, pp. 268-271.

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