Thin film transistor and active matrix type display unit...

Details Thin film transistor and active matrix type display unit... Thin film transistor and active matrix type display unit...

2006-02-07

2006-02-07

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S585000

Reexamination Certificate

active

06995048

ABSTRACT:
A first contact hole is formed penetrating a gate insulating film, on which a gate electrode is formed and simultaneously a first contact is formed in the first contact hole. A second contact hole penetrating an interlayer insulating film is formed, and a second contact is formed in the second contact hole. A third contact hole is formed penetrating a planarization film, and an electrode is formed in the third contact hole. By using a plurality of contact holes for electrically connecting the electrode and a semiconductor film, the aspect ratio of each contact hole can be reduced, thereby achieving improvement in yield, high-level integration due to a reduction in difference in area between upper and bottom surfaces of the contact, and other advantageous improvements.

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International Search Report.
Copy of Office Action for corresponding Korean Patent Application No. 10-2003-7000738 dated Nov. 26, 2004 and its excerpt English translation.

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