Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-01-12
1993-09-07
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 60, 257768, 257771, 359 87, H01L 2701
Patent
active
052432025
ABSTRACT:
A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.
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Ishii Hiromitsu
Konya Naohiro
Matsuda Kunihiro
Mori Hisatoshi
Ohno Ichiro
Bowers Courtney A.
Casio Computer Co. Ltd.
James Andrew J.
LandOfFree
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