Thin film transistor

Details Thin film transistor Thin film transistor

2006-06-01

2010-12-28

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S064000, C257SE29286, C257SE21240, C257SE51005, C438S149000

Reexamination Certificate

active

07859055

ABSTRACT:
To provide: a thin film transistor which can be operated with a low threshold and has a high transistor withstand voltage; a production method of the thin film transistor; and a semiconductor device, an active matrix substrate, and a display device, each including such a thin film transistor. The present invention is a thin film transistor including a semiconductor layer, a gate insulating film, a gate electrode on a substrate in this order, wherein a cross section of the semiconductor layer has a forward tapered shape; the gate insulating film covers a top surface and a side surface of the semiconductor layer; and the gate insulating film has a multilayer structure including a silicon oxide film on a semiconductor layer side and a film made of a material with a dielectric constant higher than a dielectric constant of silicon oxide on a gate electrode side; the gate insulating film satisfies 0.5≦B/A where a thickness of the gate insulating film on the top surface of the semiconductor layer is defined as A and a thickness of the gate insulating film on the side surface of the semiconductor layer is defined as B.

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