Thin film transistor

Details Thin film transistor Thin film transistor

2006-08-25

2009-10-20

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S088000, C257S099000, C257SE27005, C257SE27111

Reexamination Certificate

active

07605399

ABSTRACT:
Disclosed are a thin film transistor and a method for fabricating the same. The thin film transistor is capable of a fine current control. The thin film transistor includes a semiconductor layer comprising a channel; a gate electrode overlying the semiconductor layer; a source electrode connected to a first end of the semiconductor layer; a drain electrode connected to a second end of the semiconductor layer; and a conductive line connected to one of the source and drain electrodes. The conductive line is configured to generate a magnetic field penetrating through at least a portion of the semiconductor layer when an electrical current flows through the conductive line.

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patent: 2005/0056841 (2005-03-01), Yamazaki et al.
patent: 10-2003-0008817 (2003-01-01), None

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